MW7IC2725NBR1 Freescale Semiconductor, MW7IC2725NBR1 Datasheet - Page 4

• Manufacturer Part Number: MW7IC2725NBR1
• Description: IC PWR AMP RF 2700MHZ TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2725NBR1

• Current - Supply: 275mA
• Frequency: 2.7GHz
• Gain: 28.5dB
• P1db: 25W
• Package / Case: TO-272-16
• Rf Type: WiMax
• Test Frequency: 2.7GHz
• Voltage - Supply: 32V
• Drain Source Voltage (max): 65V
• Output Power (max): 4W
• Power Gain (typ)@vds: 28.5dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.7GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Output Capacitance (typ)@vds: 111@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 17%
• Mounting: Surface Mount
• Mode Of Operation: OFDM/WIMAX
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

4
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) V
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
P
IMD Symmetry @ 27 W PEP, P
VBW Resonance Point
Gain Flatness in 200 MHz Bandwidth @ P
Average Deviation from Linear Phase in 200 MHz Bandwidth
Average Group Delay @ P
Part-to-Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
Power Gain
Power Added Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Relative Constellation Error @ P
1. RCE = 20Log(EVM/100)
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 2600 MHz, Six Sigma Window
(-30 °C to +85°C)
(-30 °C to +85°C)
@ 1 dB Compression Point, CW
out
= 25 W CW
`
30 dBc
out
Characteristic
= 25 W CW, f = 2600 MHz
out
out
where IMD Third Order
= 1.25 W Avg.
(T
A
out
= 25°C unless otherwise noted)
out
= 4 W Avg.
= 25 W CW,
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
(1)
DD
= 28 Vdc, I
DD
(continued)
Symbol
IMD
VBW
ΔP1dB
= 28 Vdc, I
DQ1
ACPR
Delay
P1dB
RCE
PAE
PAR
G
IRL
ΔΦ
ΔG
G
Φ
ps
sym
F
= 77 mA, I
res
DQ1
DQ2
Min
= 77 mA, I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 275 mA, 2500- 2700 MHz Bandwidth
DQ2
0.036
0.003
27.8
Typ
-56
-13
-40
0.5
2.1
2.3
3.2
25
50
90
22
9
= 275 mA, P
Freescale Semiconductor
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
out
RF Device Data
= 26 dBm Avg.,
dBm/°C
dB/°C
MHz
MHz
Unit
dBc
dB
dB
dB
dB
dB
ns
W
%
°
°