STTH12010TV1 STMicroelectronics, STTH12010TV1 Datasheet - Page 2

• Manufacturer Part Number: STTH12010TV1
• Description: DIODE FAST REC 1000V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH12010TV1

• Voltage - Forward (vf) (max) @ If: 2V @ 60A
• Current - Reverse Leakage @ Vr: 20µA @ 1000V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 115ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/8
Symbol
Symbol
I
F(RMS)
V
I
V
I
I
I
F(AV)
T
FRM
FSM
R
RRM
T
F
stg
(1)
(2)
j
Symbol
R
R
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current t
Storage temperature range
Maximum operating junction temperature
th(j-c)
th(c)
p
p
Characteristics
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Thermal parameters
When the diodes are used simultaneously:
∆T
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
j(diode1)
Parameter
F(AV)
= P
(diode1)
Junction to case
Coupling thermal resistance
+ 0.0067 I
x
Parameter
R
th(j-c)
F
2
(RMS)
(per diode) + P
Parameter
T
T
T
T
T
Per diode
t
j
j
j
j
j
p
p
= 25° C
= 125° C
= 25° C
= 100° C
= 150° C
= 5 µs, F = 5 kHz square
= 10 ms Sinusoidal
Test conditions
(diode2)
Per diode
V
I
F
R
Total
= 60 A
= V
x
RRM
R
th(c)
T
c
Min.
= 50° C
Value
0.80
0.45
0.1
1.40
1.30
Typ
20
-65 to + 150
Value
1000
150
750
400
150
60
STTH12010TV
Max.
1.80
1.70
200
2.0
20
°C/W
Unit
Unit
Unit
°C
°C
µA
V
A
A
A
A
V