IGBT 600V 120A 416W SOT227

 

APT100GF60JU2

Manufacturer Part NumberAPT100GF60JU2
DescriptionIGBT 600V 120A 416W SOT227
ManufacturerMicrosemi Power Products Group
APT100GF60JU2 datasheets

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Specifications of APT100GF60JU2

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 100A
Current - Collector (ic) (max)120ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce12.3nF @ 25VPower - Max416W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPT100GF60JU2MI
APT100GF60JU2MI
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Typical IGBT Performance Curve
Output characteristics (V
350
Tc=-55°C
250µs Pulse Test
300
< 0.5% Duty cycle
250
200
150
100
50
0
0
1
2
V
, Collector to Emitter Voltage (V)
CE
Transfer Characteristics
300
250µs Pulse Test
250
< 0.5% Duty cycle
200
150
100
T
=25°C
J
50
T
=125°C
J
0
0
1
2
3
4
5
V
, Gate to Emitter Voltage (V)
GE
On state Voltage vs Gate to Emitter Volt.
8
T
= 25°C
J
7
250µs Pulse Test
6
< 0.5% Duty cycle
5
4
3
2
Ic=50A
1
0
6
8
10
V
, Gate to Emitter Voltage (V)
GE
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
T
, Junction Temperature (°C)
J
=15V)
Output Characteristics (V
GE
300
250µs Pulse Test
250
< 0.5% Duty cycle
Tc=25°C
200
150
100
Tc=125°C
50
0
0
3
4
V
CE
18
I
= 100A
16
C
T
= 25°C
14
J
12
10
8
6
4
2
T
=-55°C
J
0
6
7
8
9
10
0
On state Voltage vs Junction Temperature
4
3.5
Ic=200A
3
Ic=200A
2.5
Ic=100A
2
1.5
Ic=100A
Ic=50A
1
0.5
0
12
14
16
-50
-25
DC Collector Current vs Case Temperature
160
140
120
100
80
60
40
20
0
50
75
100 125
-50 -25
www.microsemi.com
APT100GF60JU2
=10V)
GE
Tc=-55°C
Tc=25°C
Tc=125°C
1
2
3
4
, Collector to Emitter Voltage (V)
Gate Charge
V
=120V
CE
V
=300V
CE
V
=480V
CE
50
100
150
200
250
300
350
Gate Charge (nC)
250µs Pulse Test
< 0.5% Duty cycle
V
= 15V
GE
0
25
50
75
100
125
T
, Junction Temperature (°C)
J
0
25
50
75 100 125 150
T
, Case Temperature (°C)
C
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