APT100GF60JU2 Microsemi Power Products Group, APT100GF60JU2 Datasheet - Page 4

IGBT 600V 120A 416W SOT227

APT100GF60JU2

Manufacturer Part Number
APT100GF60JU2
Description
IGBT 600V 120A 416W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT100GF60JU2

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
120A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GF60JU2MI
APT100GF60JU2MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GF60JU2
Manufacturer:
APT
Quantity:
15 500
Typical IGBT Performance Curve
300
250
200
150
100
350
300
250
200
150
100
50
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
J
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=125°C
0
T
10
4
J
=25°C
25
Ic=50A
2
5
Tc=-55°C
12
6
50
GE
7
T
75
Tc=125°C
J
=15V)
3
Ic=200A
=-55°C
Tc=25°C
Ic=100A
14
8
100 125
9
www.microsemi.com
10
16
4
160
140
120
100
300
250
200
150
100
3.5
2.5
1.5
0.5
80
60
40
20
50
18
16
14
12
10
4
3
2
1
0
0
0
8
6
4
2
0
-50
-50 -25
DC Collector Current vs Case Temperature
0
0
On state Voltage vs Junction Temperature
Ic=200A
Ic=100A
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
Ic=50A
C
Output Characteristics (V
CE
J
= 100A
-25
= 25°C
, Collector to Emitter Voltage (V)
50
APT100GF60JU2
T
J
T
, Junction Temperature (°C)
C
, Case Temperature (°C)
0
1
100
0
Gate Charge (nC)
25
Tc=25°C
Gate Charge
V
25
150
CE
=300V
50
2
250µs Pulse Test
< 0.5% Duty cycle
V
V
200
50
GE
CE
75 100 125 150
= 15V
=120V
Tc=-55°C
GE
250
75
=10V)
3
Tc=125°C
V
CE
100
300
=480V
125
350
4
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