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APT100GF60JU2
APT100GF60JU2 | |
|---|---|
| Manufacturer Part Number | APT100GF60JU2 |
| Description | IGBT 600V 120A 416W SOT227 |
| Manufacturer | Microsemi Power Products Group |
| APT100GF60JU2 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of APT100GF60JU2 | |||
|---|---|---|---|
| Igbt Type | NPT | Configuration | Single |
| Voltage - Collector Emitter Breakdown (max) | 600V | Vce(on) (max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Current - Collector (ic) (max) | 120A | Current - Collector Cutoff (max) | 250µA |
| Input Capacitance (cies) @ Vce | 12.3nF @ 25V | Power - Max | 416W |
| Input | Standard | Ntc Thermistor | Yes |
| Mounting Type | Chassis Mount | Package / Case | ISOTOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APT100GF60JU2MI APT100GF60JU2MI |
PrevNext
Typical IGBT Performance Curve
Output characteristics (V
350
Tc=-55°C
250µs Pulse Test
300
< 0.5% Duty cycle
250
200
150
100
50
0
0
1
2
V
, Collector to Emitter Voltage (V)
CE
Transfer Characteristics
300
250µs Pulse Test
250
< 0.5% Duty cycle
200
150
100
T
=25°C
J
50
T
=125°C
J
0
0
1
2
3
4
5
V
, Gate to Emitter Voltage (V)
GE
On state Voltage vs Gate to Emitter Volt.
8
T
= 25°C
J
7
250µs Pulse Test
6
< 0.5% Duty cycle
5
4
3
2
Ic=50A
1
0
6
8
10
V
, Gate to Emitter Voltage (V)
GE
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
T
, Junction Temperature (°C)
J
=15V)
Output Characteristics (V
GE
300
250µs Pulse Test
250
< 0.5% Duty cycle
Tc=25°C
200
150
100
Tc=125°C
50
0
0
3
4
V
CE
18
I
= 100A
16
C
T
= 25°C
14
J
12
10
8
6
4
2
T
=-55°C
J
0
6
7
8
9
10
0
On state Voltage vs Junction Temperature
4
3.5
Ic=200A
3
Ic=200A
2.5
Ic=100A
2
1.5
Ic=100A
Ic=50A
1
0.5
0
12
14
16
-50
-25
DC Collector Current vs Case Temperature
160
140
120
100
80
60
40
20
0
50
75
100 125
-50 -25
www.microsemi.com
APT100GF60JU2
=10V)
GE
Tc=-55°C
Tc=25°C
Tc=125°C
1
2
3
4
, Collector to Emitter Voltage (V)
Gate Charge
V
=120V
CE
V
=300V
CE
V
=480V
CE
50
100
150
200
250
300
350
Gate Charge (nC)
250µs Pulse Test
< 0.5% Duty cycle
V
= 15V
GE
0
25
50
75
100
125
T
, Junction Temperature (°C)
J
0
25
50
75 100 125 150
T
, Case Temperature (°C)
C
4 - 9
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