APT100GF60JU2 Microsemi Power Products Group, APT100GF60JU2 Datasheet - Page 6

• Manufacturer Part Number: APT100GF60JU2
• Description: IGBT 600V 120A 416W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GF60JU2

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 120A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GF60JU2MI; APT100GF60JU2MI

10000
1000
100
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
CE
0.9
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
Single Pulse
40
0.001
Rectangular Pulse Duration (Seconds)
Coes
Cies
Cres
www.microsemi.com
50
0.01
350
300
250
200
150
100
120
100
50
80
60
40
20
0
0
Operating Frequency vs Collector Current
20
0
Minimum Switching Safe Operating Area
V
0.1
CE
APT100GF60JU2
, Collector to Emitter Voltage (V)
40
200
I
C
, Collector Current (A)
60
400
1
80
V
D = 50%
R
T
J
G
CE
= 125°C
600
= 5Ω
= 400V
100
800
120
10
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