APT65GP60JDQ2 Microsemi Power Products Group, APT65GP60JDQ2 Datasheet - Page 6

• Manufacturer Part Number: APT65GP60JDQ2
• Description: IGBT 600V 130A 431W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 7.4nF @ 25V
• Power - Max: 431W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60JDQ2MI; APT65GP60JDQ2MI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
65GP60B2 @ 125C Eoff
Figure 21, Inductive Switching Test Circuit
90%
Switching Energy
t
d(off)
90%
I
C
D.U.T.
V
t
10%
f
CE
APT30DQ60
A
Collector Voltage
Gate Voltage
Collector Current
0
T
T
J
= 125 °C
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 24, E ON1 Test Circuit
Gate Voltage
V
TEST
100uH
A
10%
DRIVER*
A
5%
10%
t
r
t
d(on)
90%
*DRIVER SAME TYPE AS D.U.T.
Switching Energy
5 %
V
CLAMP
Collector Voltage
Collector Current
I
C
V
CE
D.U.T.
T
J
= 125 °C
B