APTGF30A60T1G

Manufacturer Part NumberAPTGF30A60T1G
DescriptionIGBT MODULE NPT PHASE LEG SP1
ManufacturerMicrosemi Power Products Group
APTGF30A60T1G datasheet
 

Specifications of APTGF30A60T1G

Igbt TypeNPTConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 30A
Current - Collector (ic) (max)42ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce1.35nF @ 25VPower - Max140W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP1
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (313Kb)Embed
Next
Phase leg
NPT IGBT Power Module
5
6
Q1
CR1
7
8
Q2
CR2
9
10
1
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
11
Features
3
NTC
4
12
Benefits
Parameter
www.microsemi.com
APTGF30A60T1G
V
= 600V
CES
I
= 30A @ Tc = 80°C
C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Max ratings
600
T
= 25°C
42
C
T
= 80°C
30
C
T
= 25°C
100
C
±20
T
= 25°C
140
C
T
= 125°C
60A@500V
j
Unit
V
A
V
W
1 – 6

APTGF30A60T1G Summary of contents

  • Page 1

    ... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF30A60T1G V = 600V CES I = 30A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF30A60T1G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF30A60T1G Min Typ Max IGBT 0.9 Diode 1.4 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

  • Page 4

    ... J T =25° 25°C J 250µs Pulse Test < 0.5% Duty cycle Ic=60A Ic=30A Ic=15A 100 125 www.microsemi.com APTGF30A60T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 37.5 T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge 18 V =120V ...

  • Page 5

    ... I , Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) APTGF30A60T1G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

  • Page 6

    ... U.S and Foreign patents pending. All Rights Reserved. 280 240 Cies 200 160 Coes 120 80 Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF30A60T1G Operating Frequency vs Collector Current V = 400V 50 6.8Ω 125° 75°C C ZCS ZVS hard switching 0 ...