APTGF50H60T1G Microsemi Power Products Group, APTGF50H60T1G Datasheet

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APTGF50H60T1G

Manufacturer Part Number
APTGF50H60T1G
Description
IGBT MODULE NPT FULL BRIDGE SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50H60T1G

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
RBSOA
Symbol
V
V
NPT IGBT Power Module
I
P
I
CM
CES
GE
5
C
7
D
11
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Pins 3/4 must be shorted together
Q1
APT0502 on www.microsemi.com
Q2
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
Full - Bridge
8
CR1
CR2
3
6
NTC
CR3
CR4
1
4
Parameter
10
Q4
Q3
12
www.microsemi.com
9
2
Application
Features
Benefits
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
APTGF50H60T1G
C
C
C
C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
C
CES
= 50A* @ Tc = 80°C
= 600V
100A @ 500V
Max ratings
±20
600
230
250
65*
50*
Unit
W
V
A
V
1 – 6

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APTGF50H60T1G Summary of contents

Page 1

... Benefits • • • • • • • Parameter www.microsemi.com APTGF50H60T1G V = 600V CES I = 50A 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T1G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF50H60T1G Min Typ Max IGBT 0.5 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

Page 4

... J 3.5 250µs Pulse Test < 0.5% Duty cycle Ic=100A 2.5 1.5 Ic=50A 0.5 Ic=25A 100 125 www.microsemi.com APTGF50H60T1G Output Characteristics (V =10V) GE 250µs Pulse Test < 0.5% Duty cycle T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V I ...

Page 5

... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T1G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

Page 6

... U.S and Foreign patents pending. All Rights Reserved. 240 200 Cies 160 120 80 Coes Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50H60T1G Operating Frequency vs Collector Current V = 400V 50 2.7Ω 125° 75°C C ZCS ZVS hard switching ...

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