APTGF50H60T1G Microsemi Power Products Group, APTGF50H60T1G Datasheet
APTGF50H60T1G
Specifications of APTGF50H60T1G
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APTGF50H60T1G Summary of contents
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... Benefits • • • • • • • Parameter www.microsemi.com APTGF50H60T1G V = 600V CES I = 50A 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T1G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGF50H60T1G Min Typ Max IGBT 0.5 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... J 3.5 250µs Pulse Test < 0.5% Duty cycle Ic=100A 2.5 1.5 Ic=50A 0.5 Ic=25A 100 125 www.microsemi.com APTGF50H60T1G Output Characteristics (V =10V) GE 250µs Pulse Test < 0.5% Duty cycle T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V I ...
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... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T1G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...
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... U.S and Foreign patents pending. All Rights Reserved. 240 200 Cies 160 120 80 Coes Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50H60T1G Operating Frequency vs Collector Current V = 400V 50 2.7Ω 125° 75°C C ZCS ZVS hard switching ...