APTGF50H60T1G

Manufacturer Part NumberAPTGF50H60T1G
DescriptionIGBT MODULE NPT FULL BRIDGE SP1
ManufacturerMicrosemi Power Products Group
APTGF50H60T1G datasheet
 

Specifications of APTGF50H60T1G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP1
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Full - Bridge
NPT IGBT Power Module
3
4
Q1
CR1
CR3
5
6
1
Q2
CR2
CR4
7
8
NTC
11
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater
than 35°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Q3
2
Features
Q4
9
10
12
Benefits
Parameter
www.microsemi.com
APTGF50H60T1G
V
= 600V
CES
I
= 50A* @ Tc = 80°C
C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Max ratings
600
T
= 25°C
65*
C
T
= 80°C
50*
C
T
= 25°C
230
C
±20
T
= 25°C
250
C
T
= 125°C
100A @ 500V
j
Unit
V
A
V
W
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APTGF50H60T1G Summary of contents

  • Page 1

    ... Benefits • • • • • • • Parameter www.microsemi.com APTGF50H60T1G V = 600V CES I = 50A 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T1G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF50H60T1G Min Typ Max IGBT 0.5 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

  • Page 4

    ... J 3.5 250µs Pulse Test < 0.5% Duty cycle Ic=100A 2.5 1.5 Ic=50A 0.5 Ic=25A 100 125 www.microsemi.com APTGF50H60T1G Output Characteristics (V =10V) GE 250µs Pulse Test < 0.5% Duty cycle T =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V I ...

  • Page 5

    ... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T1G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

  • Page 6

    ... U.S and Foreign patents pending. All Rights Reserved. 240 200 Cies 160 120 80 Coes Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF50H60T1G Operating Frequency vs Collector Current V = 400V 50 2.7Ω 125° 75°C C ZCS ZVS hard switching ...