APTGT30A170T1G Microsemi Power Products Group, APTGT30A170T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT30A170T1G
• Description: IGBT MODULE TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT30A170T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 45A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 210W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
60
50
40
30
20
10
60
50
40
30
20
10
80
60
40
20
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Switching Energy Losses vs Gate Resistance
0
0.00001
0
0
0
5
0
V
V
I
T
C
0.5
CE
GE
J
= 30A
Output Characteristics (V
T
= 125°C
0.05
0.5
0.3
J
0.7
0.9
0.1
= 900V
=15V
=125°C
20
6
Transfert Characteristics
Gate Resistance (ohms)
1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
7
1.5
0.0001
V
T
V
J
CE
=25°C
GE
60
2
T
8
(V)
J
=25°C
(V)
2.5
80
9
T
T
GE
J
3
J
=125°C
=125°C
=15V)
Eon
100
0.001
rectangular Pulse Duration (Seconds)
10
3.5
Eoff
Er
www.microsemi.com
Single Pulse
120
4
11
IGBT
0.01
70
60
50
40
30
20
10
40
35
30
25
20
15
10
0
60
50
40
30
20
10
APTGT30A170T1G
5
0
0
0
0
0
V
T
R
V
V
R
T
GE
J
G
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
=125°C
=18 Ω
J
= 125°C
0.1
=15V
= 18 Ω
= 900V
= 15V
= 125°C
400
20
1
Output Characteristics
V
40
GE
800
2
=19V
I
V
C
CE
V
(A)
CE
(V)
Eon
1
(V)
60
V
1200
GE
3
=13V
Er
V
V
Eoff
GE
GE
80
=9V
=15V
4
1600
10
100
5
4 – 5