APTGT30A170T1G Microsemi Power Products Group, APTGT30A170T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT30A170T1G
• Description: IGBT MODULE TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT30A170T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 45A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 210W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
45
40
35
30
25
20
15
10
0.00001
5
0
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.1
0.3
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
ZCS
20
0.0001
I
C
switching
(A)
30
hard
40
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=18 Ω
=900V
0.001
50
rectangular Pulse Duration (Seconds)
Single Pulse
www.microsemi.com
60
Diode
0.01
APTGT30A170T1G
100
80
60
40
20
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
1.5
F
T
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
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