APTGF50TDU120PG

Manufacturer Part NumberAPTGF50TDU120PG
DescriptionIGBT MODULE NPT TRPL DUAL SP6-P
ManufacturerMicrosemi Power Products Group
APTGF50TDU120PG datasheet
 

Specifications of APTGF50TDU120PG

Igbt TypeNPTConfigurationTriple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce3.45nF @ 25VPower - Max312W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Triple dual Common Source
NPT IGBT Power Module
C1
C3
G1
G3
E1
E3
E1/E2
E3/E4
E2
E4
G2
G4
C2
C4
C 1
C 3
G1
G3
E1
E3
E1/E2
E3/E4
E2
E4
G2
G4
C 2
C 4
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50TDU120PG
Application
AC Switches
C5
Switched Mode Power Supplies
Uninterruptible Power Supplies
G5
Features
Non Punch Through (NPT) FAST IGBT
E5
E5/E6
-
-
E6
-
-
G6
-
-
C6
-
-
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance
operation
C 5
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
G5
Solderable terminals both for power and signal for
E5
E5/E6
easy PCB mounting
E6
Very low (12mm) profile
G6
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
C 6
common source configuration of three times the
current capability
RoHS compliant
Max ratings
1200
T
= 25°C
75
c
T
= 80°C
50
c
T
= 25°C
150
c
±20
T
= 25°C
312
c
T
= 150°C
100A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 50A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
-
Symmetrical design
-
Lead frames for power connections
at
high frequency
Unit
V
A
V
W
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APTGF50TDU120PG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50TDU120PG Application • AC Switches C5 • Switched Mode Power Supplies • Uninterruptible Power Supplies ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50TDU120PG = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF50TDU120PG IGBT Diode To heatsink M6 www.microsemi.com Min Typ Max Unit 0.4 °C/W 0.9 ...

  • Page 4

    ... Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 - Junction Temperature (°C) J APTGF50TDU120PG =15V 250µs Pulse Test T =25°C < 0.5% Duty cycle =125° =25° =25° ...

  • Page 5

    ... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50TDU120PG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TDU120PG Reverse Bias Safe Operating Area 120 ...

  • Page 7

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TDU120PG www.microsemi.com ...