APTGF50TDU120PG Microsemi Power Products Group, APTGF50TDU120PG Datasheet

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APTGF50TDU120PG

Manufacturer Part Number
APTGF50TDU120PG
Description
IGBT MODULE NPT TRPL DUAL SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50TDU120PG

Igbt Type
NPT
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
G1
E1
E2
G2
V
V
I
NPT IGBT Power Module
C1
C2
P
I
CM
Triple dual Common Source
CES
C
GE
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
E1/E2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
C 1
C 2
E1/E2
G1
G2
E1
E2
G3
E3
E4
G4
C3
C4
E3/E4
Parameter
C 3
C 4
G3
E3
E4
G4
E3/E4
E5/E6
C 5
C 6
G5
E5
E6
G6
C5
C6
G5
G6
E5
E6
www.microsemi.com
T
T
T
T
T
E5/E6
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
APTGF50TDU120PG
100A @ 1200V
Max ratings
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS compliant
1200
-
-
-
-
-
-
-
-
±20
150
312
75
50
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
V
I
C
Symmetrical design
Lead frames for power connections
CES
= 50A @ Tc = 80°C
= 1200V
Unit
W
A
V
V
at
high frequency
1 - 7

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APTGF50TDU120PG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50TDU120PG Application • AC Switches C5 • Switched Mode Power Supplies • Uninterruptible Power Supplies ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50TDU120PG = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF50TDU120PG IGBT Diode To heatsink M6 www.microsemi.com Min Typ Max Unit 0.4 °C/W 0.9 ...

Page 4

... Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 - Junction Temperature (°C) J APTGF50TDU120PG =15V 250µs Pulse Test T =25°C < 0.5% Duty cycle =125° =25° =25° ...

Page 5

... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50TDU120PG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TDU120PG Reverse Bias Safe Operating Area 120 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TDU120PG www.microsemi.com ...

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