APTGF200A120D3G

Manufacturer Part NumberAPTGF200A120D3G
DescriptionIGBT MODULE NPT PHASE LEG D3
ManufacturerMicrosemi Power Products Group
APTGF200A120D3G datasheet
 

Specifications of APTGF200A120D3G

Igbt TypeNPTConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 200A
Current - Collector (ic) (max)300ACurrent - Collector Cutoff (max)5mA
Input Capacitance (cies) @ Vce13nF @ 25VPower - Max1400W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseD3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Phase leg
NPT IGBT Power Module
Q1
4
5
Q2
6
7
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF200A120D3G
Application
Welding converters
3
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
1
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
2
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
Max ratings
1200
T
= 25°C
300
C
T
= 80°C
200
C
T
= 25°C
400
C
±20
T
= 25°C
1400
C
T
= 125°C
400A@1150V
j
www.microsemi.com
V
= 1200V
CES
I
= 200A @ Tc = 80°C
C
of V
C
CEsat
Unit
V
A
V
W
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APTGF200A120D3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF200A120D3G Application • Welding converters 3 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGF200A120D3G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 200A T = 125°C C ...

  • Page 3

    ... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D3 Package outline A APTGF200A120D3G Min IGBT Diode 2500 -40 -40 -40 For terminals Heatsink M6 3 1° DÉTAIL A www.microsemi.com Typ ...

  • Page 4

    ... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGF200A120D3G =15V) GE 400 T J 300 200 100 T =125° (V) Energy losses vs Collector Current 125° ...

  • Page 5

    ... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF200A120D3G Forward Characteristic of diode 400 ...