APTGF200A120D3G Microsemi Power Products Group, APTGF200A120D3G Datasheet - Page 4

• Manufacturer Part Number: APTGF200A120D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200A120D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
400
300
200
100
400
300
200
100
100
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.1
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
Output Characteristics (V
CE
GE
J
0.05
0.5
= 200A
0.3
0.1
0.9
0.7
= 125°C
6
= 600V
5
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
10
7
2
0.0001
15
V
8
T
V
J
T
CE
GE
=125°C
J
3
=25°C
(V)
(V)
T
20
9
J
=125°C
T
J
=25°C
4
10
25
GE
Eoff
=15V)
rectangular Pulse Duration (Seconds)
0.001
5
30
11
Eon
Err
Single Pulse
35
12
6
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IGBT
0.01
500
400
300
200
100
60
50
40
30
20
10
400
300
200
100
0
0
APTGF200A120D3G
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
J
= 125°C
=125°C
= 4.7 Ω
=4.7 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
100
Output Characteristics
2
600
I
V
200
C
V
V
CE
(A)
GE
3
CE
(V)
=20V
900
1
(V)
4
300
Eon
1200
V
V
GE
V
Eoff
GE
5
GE
=15V
=9V
Err
=12V
1500
400
10
6
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