MIO1200-25E10 IXYS, MIO1200-25E10 Datasheet - Page 3

• Manufacturer Part Number: MIO1200-25E10
• Description: MOD IGBT SGL SWITCH 2500V E10
• Manufacturer: IXYS

Specifications of MIO1200-25E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 186nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 2500
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.5
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1250
• Rthjc, Max, Igbt, (k/w): 0.009
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2011 IXYS All rights reserved
Fig. 1 Typical output characteristics, chip level
Fig. 3 Typical onstate characteristics, chip level
Fig. 5 Typical gate charge characteristics
2400
2200
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1400
1200
1000
2400
2200
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15
10
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5
0
0
0
0
0
0
9 V
2
17 V
15 V
13 V
11 V
1
1
4
2
V
CC
2
Q
= 1250
V
g
V
CE
6
CE
25 °C
[µC]
3
[V]
[V]
3
V
8
4
CC
I
T
C
= 1750
vj
= 1200 A
V
= 25 °C
Tvj = 25°C
GE
125 °C
4
10
5
= 15 V
12
5
6
Fig. 2 Typical output characteristics, chip level
Fig. 4 Typical transfer characteristics, chip level
Fig. 6 Typical capacitances vs
1000
100
2400
2200
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1
0
0
0
0
0
collector-emitter voltage
1
5
2
1
11 V
17 V
15 V
13 V
9 V
3
10
C
C
C
4
ies
oes
res
2
5
15
V
CE
V
V
MIO 1200-25E10
6
GE
CE
[V]
3
[V]
[V]
20
7
125 °C
8
4
25
9 10 11 12 13
V
f
V
OSC
GE
OSC
T
vj
= 0 V
= 1 MHz
25 °C
= 125 °C
= 50 mV
30
5
35
6
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