MIO1200-25E10 IXYS, MIO1200-25E10 Datasheet - Page 6

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MIO1200-25E10

Manufacturer Part Number
MIO1200-25E10
Description
MOD IGBT SGL SWITCH 2500V E10
Manufacturer
IXYS
Datasheet

Specifications of MIO1200-25E10

Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 1200A
Current - Collector (ic) (max)
1200A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
186nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
2500
Ic25, Tc = 25°c, Igbt, (a)
1650
Ic80, Tc = 80°c, Igbt, (a)
1200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.5
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1250
Rthjc, Max, Igbt, (k/w)
0.009
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1200
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIO1200-25E10
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
MIO1200-25E10
Quantity:
60
MIO 1200-25E10
Outline drawing
'
'
Note: all dimensions are shown in mm
20110119a
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