MIO1200-25E10 IXYS, MIO1200-25E10 Datasheet - Page 4

• Manufacturer Part Number: MIO1200-25E10
• Description: MOD IGBT SGL SWITCH 2500V E10
• Manufacturer: IXYS

Specifications of MIO1200-25E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 186nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 2500
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.5
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1250
• Rthjc, Max, Igbt, (k/w): 0.009
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

© 2011 IXYS All rights reserved
Fig. 7 Typical switching energies per pulse
Fig. 9 Typical switching timesvs collector current
Fig. 11 Turn-off safe operating area (RBSOA)
2.5
1.5
0.5
2
1
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
10
0
1
0
V
0
CC
V
R
V
T
L
vs collector current
t
σ
d(on)
CC
GE
vj
G
t
≤ 1800 V
IC, Chip
IC, Module
f
= 100 nH
= 125 °C
= 1.5 ohm
500
t
= 1250 V
= ±15 V
d(off)
t
r
500
1000
1000
1000
V
1500
I
CE
C
I
C
[A]
[V]
[A]
1500
E
2000
2000
on
E
off
V
R
V
T
L
vj
σ
CC
G
GE
2000
= 100 nH
= 125 °C
= 1.5 ohm
2500
= 1250 V
= ±15 V
3000
2500
3000
Fig. 8 Typical switching energies per pulse
Fig. 10 Typical switching timesvs gate resistor
Fig. 12 Typical diode forward characteristics,
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
2400
2200
2000
1800
1600
1400
1200
1000
10
800
600
400
200
1
0
0
0
V
I
V
T
L
0
V
I
V
T
L
C
C
vs gate resistor
σ
σ
vj
CC
GE
vj
CC
GE
= 1200 A
= 1200 A
= 100 nH
= 100 nH
= 125 °C
= 125 °C
chip level
= 1250 V
= ±15 V
= 1250 V
= ±15 V
0.5
5
5
E
1
R
R
on
G
G
V
MIO 1200-25E10
10
10
[ohm]
[ohm]
F
[V]
1.5
E
off
25 °C
15
15
t
t
t
t
d(off)
d(on)
r
f
2
125 °C
2.5
20
20
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