STE30NK90Z STMicroelectronics, STE30NK90Z Datasheet - Page 4

• Manufacturer Part Number: STE30NK90Z
• Description: MOSFET N-CH 900V 28A ISOTOP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STE30NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 490nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 210mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.21 Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Package Type: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4336-5

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
Symbol
CASE
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
g
t
t
I
I
C
DS(on)
GS(th)
C
C
d(on)
d(off)
Q
Q
DSS
GSS
Q
fs
oss eq.
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
output capacitance
reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
rise time
turn-off delay time
fall time
Total gate charge
gate-source charge
gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
DS
DS
GS
GS
DS
DD
DD
GS
G
= 1 mA, V
= 125 °C
= 4.7Ω V
= Max Rating
= Max Rating,
= ± 20V
= V
= 10V, I
= 15 V
= 25V, f = 1 MHz,
= 0
= 0V,
= 0V to 720 V
= 10V
= 450 V, I
= 720 V, I
Figure
Figure
Test conditions
Test conditions
GS
, I
,
14)
15)
I
D
GS
GS
D
D
= 14 A
D
D
= 150 µA
= 14 A
= 10 V
= 0
= 13 A
= 26 A,
Min.
Min.
900
3
12000
Typ.
Typ.
3.75
0.21
852
166
377
250
350
190
26
67
59
72
51
oss
STE30NK90Z
Max.
±100
Max.
0.26
100
490
when V
4.5
10
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S