STL85N6F3 STMicroelectronics, STL85N6F3 Datasheet - Page 7

• Manufacturer Part Number: STL85N6F3
• Description: MOSFET N-CH 60V 19A POWERFLAT5X6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL85N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10882-2

STL85N6F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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