STP8N65M5 STMicroelectronics, STP8N65M5 Datasheet - Page 15

• Manufacturer Part Number: STP8N65M5
• Description: MOSFET N-CH 650V 7A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 710V
• On Resistance Rds(on): 0.56ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10885-5

STD/F/I/P/U8N65M5
DIM.
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D
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TO-252 (DPAK) mechanical data
Doc ID 16531 Rev 2
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Package mechanical data
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