IPA60R380E6 Infineon Technologies, IPA60R380E6 Datasheet - Page 11

• Manufacturer Part Number: IPA60R380E6
• Description: MOSFET N-CH 600V 10.6A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R380E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10.6A
• Vgs(th) (max) @ Id: 3.5V @ 320µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 100V
• Power - Max: 31W
• Mounting Type: *
• Package / Case: *
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 380.0 mOhm
• Id(max) @ Tc=25°c: 10.6 A
• Idpuls (max): 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FinalData Sheet
Table 15
Table 16
Typ. transfer characteristics
Avalanche energy
E
I
D
AS
=f(V
=f(T
GS
j
); V
); I
D
DS
=1.8 A; V
=20V
DD
=50 V
11
Typ. gate charge
V
Drain-source breakdown voltage
V
GS
BR(DSS)
=f(Q
600V CoolMOS™ E6 Power Transistor
=f(T
gate
), I
j
); I
D
=4.8A pulsed
D
=0.25 mA
Electrical characteristics diagrams
Rev. 2.0, 2010-04-09
IPx60R380E6