IPA60R380E6 Infineon Technologies, IPA60R380E6 Datasheet - Page 7

• Manufacturer Part Number: IPA60R380E6
• Description: MOSFET N-CH 600V 10.6A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R380E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10.6A
• Vgs(th) (max) @ Id: 3.5V @ 320µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 100V
• Power - Max: 31W
• Mounting Type: *
• Package / Case: *
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 380.0 mOhm
• Id(max) @ Tc=25°c: 10.6 A
• Idpuls (max): 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7
Parameter
IGate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Table 8
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
FinalData Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
V
Symbol
V
t
Q
I
rr
rrm
plateau
SD
gs
gd
g
rr
Min.
-
-
-
-
Min.
-
-
-
-
7
Typ.
4
16
32
5.4
Typ.
0.9
290
3.3
21
Values
Values
600V CoolMOS™ E6 Power Transistor
Max.
-
-
-
-
Max.
-
-
-
-
Unit
nC
V
Unit
V
ns
µC
A
Electrical characteristics
Note /
Test Condition
V
V
Note /
Test Condition
V
T
V
d
(see table 22)
Rev. 2.0, 2010-04-09
i
j
DD
GS
GS
R
=25 °C
F
=400 V,
/d
=480 V,
=0 to 10 V
=0 V,
t
IPx60R380E6
=100 A/µs
I
F
I
=4.8A,
F
I
=4.8 A,
D
=4.8 A,