BF904R,235 NXP Semiconductors, BF904R,235 Datasheet - Page 3

• Manufacturer Part Number: BF904R,235
• Description: MOSFET N-CH 7V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF904R,235

• Package / Case: TO-253-4 Reverse Pinning, SC-61
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 15 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
I
I
P
T
T
D
G1
G2
handbook, halfpage
stg
j
DS
tot
N-channel dual gate MOS-FETs
(mW)
P
SYMBOL
tot
250
200
150
100
50
0
0
Fig.3 Power derating curves.
BF904R
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
50
BF904
BF904R
BF904
100
PARAMETER
150
T amb ( C)
MRA770
o
Rev. 06 - 13 November 2007
200
see Fig.3
T
T
amb
amb
CONDITIONS
50 C; note 1
40 C; note 1
65
MIN.
BF904; BF904R
7
30
200
200
+150
150
10
10
Product specification
MAX.
3 of 14
V
mA
mA
mA
mW
mW
C
C
UNIT