BF1109R,215 NXP Semiconductors, BF1109R,215 Datasheet

MOSFET 2N-CH 11V 30MA SOT143R

BF1109R,215

Manufacturer Part Number
BF1109R,215
Description
MOSFET 2N-CH 11V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1109R,215

Package / Case
TO-253-4 Reverse Pinning, SC-61
Current Rating
30mA
Frequency
800MHz
Gain
38dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.5dB
Voltage - Test
9V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
11 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
11V
Power Gain (typ)@vds
38@9VdB
Noise Figure (max)
2.5dB
Frequency (max)
1GHz
Package Type
SOT-143R
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@9V@Gate 1/1.5@9V@Gate 2pF
Output Capacitance (typ)@vds
1.3@9VpF
Reverse Capacitance (typ)
0.025@9VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Current - Test
-
Lead Free Status / Rohs Status
Compliant
Product specification
Supersedes data of 1997 Sep 03
DATA SHEET
BF1109; BF1109R; BF1109WR
N-channel dual-gate MOS-FETs
DISCRETE SEMICONDUCTORS
1997 Dec 08

Related parts for BF1109R,215

BF1109R,215 Summary of contents

Page 1

DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 DISCRETE SEMICONDUCTORS 1997 Dec 08 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FETs FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier GHz  Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS  VHF and UHF applications with 9 V ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1. Device mounted on a printed-circuit board. ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient in free air th j-a R thermal resistance from junction to soldering point th j-s Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FETs 25 handbook, halfpage I D (mA G2  Fig.5 Output characteristics; typical values. 40 handbook, halfpage y fs (mS  Fig.7 Forward transfer admittance as a function of drain current; typical values. 1997 Dec 08 MDA613 handbook, halfpage 1.6 V 1.5 V 1.4 V 1.3 V 1 (V) MDA615 ...

Page 6

... NXP Semiconductors N-channel dual-gate MOS-FETs 16 handbook, halfpage I D (mA G2  Fig.9 Drain current as a function of drain-source voltage; typical values. 120 handbook, halfpage V unw (dBμV) 110 100 mA G2nom Dnom = 25  MHz; T unw amb Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; ...

Page 7

... NXP Semiconductors N-channel dual-gate MOS-FETs 2 10 handbook, halfpage y is (mS −1 10 − G2  mA amb Fig.12 Input admittance as a function of frequency; typical values handbook, halfpage | (mS ϕ G2  mA amb Fig.14 Forward transfer admittance and phase as a function of frequency; typical values. 1997 Dec 08 MDA620 10 handbook, halfpage ...

Page 8

... NXP Semiconductors N-channel dual-gate MOS-FETs handbook, full pagewidth input 50 Ω mS 0.5 mS 200 MHz nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set G C1 adjusted for ...

Page 9

... NXP Semiconductors N-channel dual-gate MOS-FETs handbook, full pagewidth Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.71 50 0.995 7.29 100 0.992 14.3 200 0.984 21.2 300 0.973 27.9 400 0.961 34.4 500 0.944 40.8 600 0.926 46.9 700 0.906 52.9 800 0.887  ...

Page 10

... NXP Semiconductors N-channel dual-gate MOS-FETs PACKAGE OUTLINES Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B 1997 Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 11

... NXP Semiconductors N-channel dual-gate MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R 1997 Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...

Page 12

... NXP Semiconductors N-channel dual-gate MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.5 0.8 OUTLINE VERSION IEC SOT343R 1997 Dec scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES ...

Page 13

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 14

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 15

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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