BLF7G20L-200,112 NXP Semiconductors, BLF7G20L-200,112 Datasheet
BLF7G20L-200,112
Specifications of BLF7G20L-200,112
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BLF7G20L-200,112 Summary of contents
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... BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 — 1 March 2011 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8 0.01 % probability on CCDF. ...
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... In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-c) BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads - earless flanged LDMOST ceramic package; 2 leads ...
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... Symbol P L(AV D ACPR 7.1 Ruggedness in class-AB operation The BLF7G20L-200 and BLF7G20LS-200 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 Characteristics C unless otherwise specified. drain-source breakdown voltage V gate-source threshold voltage ...
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... 1620 mA ( 1805 MHz ( 1845 MHz ( 1880 MHz Fig 1. Power gain as a function of average output power; typical values BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 014aab189 (3) (2) (1) 120 160 200 P (W) L(AV) Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2011 ...
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... Power gain and drain efficiency as functions of average output power; typical values 1620 mA; PAR = 7 0.01 % probability on the CCDF ( 1805 MHz ( 1845 MHz ( 1880 MHz Fig 5. Adjacent power channel ratio (5 MHz) as function of average output power; typical values BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 014aab191 50 η D PAR (%) (dB ...
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... 1620 mA; channel spacing = 5 MHz PAR = 8 0.01 % probability on the CCDF. ( 1805 MHz ( 1845 MHz ( 1880 MHz Fig 8. Drain efficiency as a function of average output power; typical values BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 014aab194 50 η D (%) 120 150 P (W) L(AV) Fig 7. 014aab196 APCR (dBc) ...
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... C1, C9, C11, C16 C4 C12, C14 C13 C2, C8, C10, C15 R1, R2 BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 C5 List of components for component layout. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... ESD LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA 10. Revision history Table 10. Revision history Document ID BLF7G20L-200_7G20LS-200 v.3 20110301 Modifications: BLF7G20L-200_7G20LS-200 v.2 20100827 BLF7G20L-200_7G20LS-200 v.1 20100603 BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave ...
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... BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G20L-200_7G20LS-200 Preliminary data sheet BLF7G20L-200; BLF7G20LS-200 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 1 March 2011 Document identifier: BLF7G20L-200_7G20LS-200 ...