BLF7G20L-250P,112 NXP Semiconductors, BLF7G20L-250P,112 Datasheet

TRANSISTOR PWR LDMOS SOT539

BLF7G20L-250P,112

Manufacturer Part Number
BLF7G20L-250P,112
Description
TRANSISTOR PWR LDMOS SOT539
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G20L-250P,112

Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
1.81GHz ~ 1.88GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
37.54A
Current - Test
1.9A
Voltage - Test
28V
Power - Output
70W
Resistance Drain-source Rds (on)
0.078 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
250 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1880 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF7G20L-250P;
BLF7G20LS-250P
Power LDMOS transistor
Rev. 3 — 1 March 2011
Excellent ruggedness
High-efficiency
Low R
Designed for broadband operation (1805 MHz to 1880 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1805 MHz to 1880 MHz frequency range
Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
th
Typical performance
providing excellent thermal stability
case
f
(MHz)
1805 to 1880
= 25
C in a common source class-AB production test circuit.
I
(mA)
1900
Dq
V
(V)
28
DS
P
(W)
70
L(AV)
G
(dB)
18
Product data sheet
p
(%)
35
D
ACPR
(dBc)
29.5
[1]

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BLF7G20L-250P,112 Summary of contents

Page 1

... BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8 0.01% probability on CCDF. ...

Page 2

... BLF7G20LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...

Page 3

... P L(AV  D ACPR 7.1 Ruggedness in class-AB operation The BLF7G20L-250P and BLF7G20LS-250P are capable of withstanding a load mismatch corresponding to a VSWR = through all phases under the following conditions: V 1880 MHz. BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C unless otherwise specified ...

Page 4

... Measured load-pull data half device (MHz) 1750 1805 1845 1880 1930 [1] Z and Z S Fig 1. BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P Typical impedance = 950 mA [ () 1.31  j3.53 1.39  j3.75 1.48  j4.10 1.55  j4.19 1.97  j4.48 defined in Figure 1 ...

Page 5

... D (%) 100 ( 1805 MHz. ( 1845 MHz. ( 1880 MHz. Fig 4. Efficiency as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P 001aal942 (1) (2) (3) ACPR (dBc) 250 350 P (W) L(M) ( 1805 MHz. ( 1845 MHz. ( 1880 MHz. Fig 3. 001aal950 G ...

Page 6

... MHz. ( 1845 MHz. ( 1880 MHz. Fig 6. Power gain as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P = 1900 mA. Dq 001aal949 (1) (2) (3) 200 300 P (W) L(AV) Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2011 ...

Page 7

... D 17.0 16.5 16 Fig 10. Average power gain and drain efficiency as a function of average output power; typical values BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P = 1900 mA; channel spacing = 5 MHz; PAR = 8 0.01 % probability Dq 001aal946 η D (1) (%) (2) (3) 100 120 140 P (W) L(AV) ( 1805 MHz ...

Page 8

... See mechanical drawing (Figure C16 NXP BLF7G20L-250P Input Rev 03 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 m See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 13. Package outline SOT539A BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P scale ...

Page 10

... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 14. Package outline SOT539B BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P scale ...

Page 11

... DPCH ESD LDMOS LDMOST PAR VSWR W-CDMA 11. Revision history Table 11. Revision history Document ID BLF7G20L-250P_7G20LS-250P v.3 20110103 Modifications: BLF7G20L-250P_7G20LS-250P v.2 20100909 BLF7G20L-250P_7G20LS-250P v.1 20091216 BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave ...

Page 12

... BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF7G20L-250P_7G20LS-250P Product data sheet BLF7G20L-250P; BLF7G20LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 1 March 2011 Document identifier: BLF7G20L-250P_7G20LS-250P ...

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