BLF7G20LS-200,112 NXP Semiconductors, BLF7G20LS-200,112 Datasheet - Page 10

• Manufacturer Part Number: BLF7G20LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 10.
BLF7G20L-200_7G20LS-200
Preliminary data sheet
Document ID
BLF7G20L-200_7G20LS-200 v.3 20110301
Modifications:
BLF7G20L-200_7G20LS-200 v.2 20100827
BLF7G20L-200_7G20LS-200 v.1 20100603
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Release
date
Abbreviations
•
•
Table 6 on page
Section 7.1 on page
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G20L-200; BLF7G20LS-200
Data sheet status
Preliminary data sheet -
Preliminary data sheet -
Objective data sheet
Rev. 3 — 1 March 2011
3: I
GSS
3: the value 1990 MHz has been changed to 1880 MHz
values added
Change
notice
-
Supersedes
BLF7G20L-200_7G20LS-200 v.2
BLF7G20L-200_7G20LS-200 v.1
-
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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