BLL6H1214L-250,112 NXP Semiconductors, BLL6H1214L-250,112 Datasheet

TRANS L-BAND RADAR LDMOS SOT502A

BLL6H1214L-250,112

Manufacturer Part Number
BLL6H1214L-250,112
Description
TRANS L-BAND RADAR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLL6H1214L-250,112

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
1.2GHz ~ 1.4GHz
Gain
17dB
Voltage - Rated
100V
Current Rating
42A
Current - Test
100mA
Voltage - Test
50V
Power - Output
250W
Resistance Drain-source Rds (on)
100 mOhms
Configuration
Single
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
42 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Typical RF performance at T
production test circuit.
Mode of operation
pulsed RF
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 3 — 14 July 2010
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Test information
Dq
of 100 mA, a t
f
(GHz)
1.2 to 1.4
case
= 25
p
of 300 s with  of 10 %:
C; t
V
(V)
50
DS
p
= 300
P
(W)
250
L
s;
= 10 %; I
G
(dB)
17
Dq
p
= 100 mA; in a class-AB
(%)
55
D
Product data sheet
t
(ns)
15
r
t
(ns)
5
f

Related parts for BLL6H1214L-250,112

BLL6H1214L-250,112 Summary of contents

Page 1

... BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 14 July 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... NXP Semiconductors 1.3 Applications  L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin BLL6H1214L-250 (SOT502A BLL6H1214LS-250 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLL6H1214L-250 BLL6H1214LS-250 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor Conditions = 85  250 W case L = 100 s;  ...

Page 4

... NXP Semiconductors 6.1 Ruggedness in class-AB operation The BLL6H1214L-250 and BLL6H1214LS-250 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions Application information 7.1 Impedance information Table 8. Typical values unless otherwise specified. f GHz 1.2 1.3 1.4 Fig 1. BLL6H1214L-250_1214LS-250 Product data sheet = 50 V ...

Page 5

... G p (dB ( 100 mA 1200 MHz ( 1300 MHz ( 1400 MHz Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor (1) (2) ( 100 150 200 250 = 300 s;  Power gain as a function of load power; ...

Page 6

... P ( 100 mA. Dq Fig (dB 1175 1225 1275 1325 = 300 s;  100 mA All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor 20 G η (dB 1175 1225 1275 1325 = 300 s;  250 100 mA ...

Page 7

... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor R1  = 6.15 F/m; r Value ...

Page 8

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor 3.38 1.70 34 ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 ...

Page 10

... Abbreviations Table 10. Acronym LDMOS LDMOST RF SMD VSWR 10. Revision history Table 11. Revision history Document ID BLL6H1214L-250_1214LS-250 v.3 Modifications: BLL6H1214L-250_1214LS-250_2 BLL6H1214L-250_1214LS-250_1 BLL6H1214L-250_1214LS-250 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 14 July 2010 BLL6H1214L(S)-250 LDMOS L-band radar power transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H1214L-250_1214LS-250 All rights reserved. Date of release: 14 July 2010 ...

Related keywords