MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 15

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
--45
--50
--55
--60
--65
--70
--75
--80
0
Figure 25. Spectral Regrowth at 600 kHz
V
I
EDGE Modulation
DQA
DD
= 28 Vdc
= I
20
DQB
= 330 mA
P
versus Output Power
out
, OUTPUT POWER (WATTS)
40
1805 MHz
60
18
15
12
9
6
3
0
1450
1880 MHz
TYPICAL CHARACTERISTICS — GSM EDGE
Figure 27. Broadband Frequency Response
1615
80
V
P
I
DQA
1840 MHz
DD
in
= 0 dBm
1780
= 28 Vdc
= I
100
Gain
DQB
IRL
= 330 mA
1945
f, FREQUENCY (MHz)
120
2110
10
2275
8
6
4
2
0
1
V
I
EDGE Modulation
DQA
DD
2440
= 28 Vdc
= I
Figure 26. EVM and Drain Efficiency
DQB
1805 MHz
= 330 mA
2605
P
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
1840 MHz
2770
MRF8P20100HR3 MRF8P20100HSR3
1880 MHz
0
--6
--12
--18
--24
--30
--36
10
η
D
1805 MHz
1840 MHz
EVM
100
1880 MHz
300
60
48
36
12
0
24
15