MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 8

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

8
MRF8P20100HR3 MRF8P20100HSR3
Figure 12. Series Equivalent Source and Load Impedance — Peaking Side
Figure 11. Series Equivalent Source and Load Impedance — Carrier Side
V
V
Input
Matching
Network
Input
Matching
Network
DD
DD
Note: Measured with Peaking side open.
Z
Z
Note: Measured with Carrier side open.
Z
Z
source
load
source
load
= 28 Vdc, I
= 28 Vdc, I
1880
1900
1920
1940
1960
1980
2000
2020
2040
MHz
1880
1900
1920
1940
1960
1980
2000
2020
2040
MHz
f
f
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DQA
DQA
gate to ground.
drain to ground.
Z
gate to ground.
drain to ground.
Z
source
source
= 400 mA, V
= 400 mA, V
3.23 -- j10.1
3.36 -- j9.78
3.42 -- j9.61
3.33 -- j9.44
3.22 -- j9.16
3.31 -- j8.90
3.48 -- j8.87
3.39 -- j8.92
3.13 -- j8.58
3.83 -- j10.28
3.88 -- j10.00
3.82 -- j9.81
3.61 -- j9.59
3.50 -- j9.30
3.58 -- j9.10
3.61 -- j9.13
3.43 -- j9.10
3.10 -- j8.55
Z
Z
source
Device
Under
Test
Device
Under
Test
source
Ω
Ω
GSB
GSB
= 1.3 Vdc, P
= 1.3 Vdc, P
Z
Z
load
load
6.35 -- j5.32
6.64 -- j5.29
6.86 -- j5.42
6.94 -- j5.64
6.99 -- j5.82
7.17 -- j6.03
7.33 -- j6.46
7.10 -- j6.92
6.64 -- j6.97
0.67 -- j7.03
0.68 -- j6.71
0.62 -- j6.43
0.48 -- j6.11
0.35 -- j5.70
0.35 -- j5.32
0.35 -- j5.07
0.21 -- j4.75
0.10 -- j4.19
out
out
Z
Z
load
Ω
load
Ω
= 20 W Avg.
= 20 W Avg.
Output
Matching
Network
Output
Matching
Network
Freescale Semiconductor
RF Device Data