MRF6V3090NBR1 Freescale Semiconductor, MRF6V3090NBR1 Datasheet - Page 5

• Manufacturer Part Number: MRF6V3090NBR1
• Description: FET RF N-CH 860MHZ 50V TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V3090NBR1

• Transistor Type: N-Channel
• Frequency: 860MHz
• Gain: 22dB
• Voltage - Rated: 110V
• Current - Test: 350mA
• Voltage - Test: 50V
• Power - Output: 18W
• Package / Case: TO-272BB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
1000
26
25
24
23
22
21
20
19
18
17
100
10
--6
Figure 4. Capacitance versus Drain- -Source Voltage
Figure 6. CW Output Power versus Input Power
0
P1dB = 20.7 dBm (117.5 W)
Measured with ±30 mV(rms)ac @ 1 MHz, V
P2dB = 21.06 dBm (127.6 W)
--4
P3dB = 21.28 dBm (134.3 W)
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
P
in
, INPUT POWER (dBm)
V
--2
DD
20
= 50 Vdc, I
25
24
23
22
21
20
19
18
DQ
0
1
30
= 350 mA, f = 860 MHz
Figure 8. CW Power Gain and Drain Efficiency
V
T
85_C
C
GS
DD
TYPICAL CHARACTERISTICS — CW
= --30_C
= 0 Vdc
= 50 Vdc, I
25_C
2
40
Ideal
DQ
P
Actual
versus Output Power
out
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
= 350 mA, f = 860 MHz
, OUTPUT POWER (WATTS)
C
C
C
iss
oss
rss
4
50
10
24
23
22
21
20
19
18
17
G
η
1
ps
D
25
24
23
21
20
19
18
17
16
Figure 5. CW Power Gain and Drain Efficiency
22
V
G
DD
ps
0
Figure 7. CW Power Gain versus Output Power
= 50 Vdc, I
V
T
DD
C
η
= --30_C
= 50 Vdc, I
D
20
100
DQ
85_C
P
versus Output Power
out
= 350 mA, f = 860 MHz
25_C
DQ
, OUTPUT POWER (WATTS)
P
40
out
= 350 mA, f = 860 MHz
200
, OUTPUT POWER (WATTS)
0
10
70
60
50
40
30
20
10
60
V
DD
80
= 40 V
100
100
45 V
120
200
50 V
70
60
50
40
30
20
10
0
140
5