PBSS4041NZ,115 NXP Semiconductors, PBSS4041NZ,115 Datasheet
PBSS4041NZ,115
Manufacturer Part Number
PBSS4041NZ,115
Description
TRANS NPN 60V 7A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4041NZ115.pdf
(15 pages)
Specifications of PBSS4041NZ,115
Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Power - Max
2.6W
Current - Collector (ic) (max)
7A
Voltage - Collector Emitter Breakdown (max)
60V
Transistor Type
NPN
Current - Collector Cutoff (max)
100nA
Frequency - Transition
105MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 4A, 2V
Vce Saturation (max) @ Ib, Ic
195mV @ 350mA, 7A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS4041NZ,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
NPN low V
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS4041NZ
60 V, 7 A NPN low V
Rev. 01 — 31 March 2010
Very low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
CEsat
FE
) at high I
Conditions
open base
single pulse;
t
I
I
C
p
C
B
≤ 1 ms
(BISS) transistor
= 600 mA
= 6 A;
and I
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
17.5
Product data sheet
Max
60
7
15
25
V
A
Unit
A
mΩ
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