BPW41N Vishay, BPW41N Datasheet - Page 2

• Manufacturer Part Number: BPW41N
• Description: Photodiodes 60V 215mW 950nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder
• Series: -r

Specifications of BPW41N

• Lens Type: Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 45 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: Side Looker
• Maximum Operating Temperature: + 100 C
• Wavelength Typ: 950nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: Side Looking
• No. Of Pins: 2
• Leaded Process Compatible: Yes
• Reverse Voltage Vr: 60V
• Capacitance: 70pF
• Active Area: 7.5mm2
• Breakdown Voltage Vbr: 60V
• Diode Type: Photodiode
• External Depth: 4mm
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 45uA
• Rise Time: 100ns
• Fall Time: 100ns
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81522
Rev. 1.5, 08-Sep-08
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 8409
1.4
1.2
1.0
0.8
0.6
0
T
20
amb
- Ambient Temperature (°C)
k
o
λ = 950 nm
V
40
R
Silicon PIN Photodiode, RoHS Compliant
= 5 V
For technical questions, contact: [e-mail]
60
V
V
R
R
E
E
E
E
E
= 10 V, R
= 10 V, R
V
V
e
e
e
e
e
= 1 mW/cm
R
R
V
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
80
R
TEST CONDITION
I
R
V
= 10 V, λ = 950 nm
R
= 100 µA, E = 0
= 10 V, E = 0
V
L
L
100
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 5 V
2
2
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
SYMBOL
V
TK
NEP
TK
λ
C
C
V
I
I
λ
(BR)
I
ϕ
t
ro
ra
0.5
t
k
r
f
D
D
o
p
Vo
Ik
94 8414
Fig. 2 - Reverse Light Current vs. Irradiance
1000
100
0.1
10
1
0.01
MIN.
60
43
Vishay Semiconductors
E
870 to 1050
e
0.1
- Irradiance (mW/cm²)
4 x 10
TYP.
- 2.6
± 65
350
950
100
100
0.1
70
25
38
45
2
-14
1
λ
MAX.
V
= 950 nm
30
40
R
BPW41N
= 5 V
www.vishay.com
10
W/√ Hz
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
pF
pF
µA
µA
ns
ns
V
391