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BSM75GAR120DN2
BSM75GAR120DN2 | |
|---|---|
| Manufacturer Part Number | BSM75GAR120DN2 |
| Description | IGBT Transistors 1200V 100A GAR CH |
| Manufacturer | Infineon Technologies |
| BSM75GAR120DN2 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of BSM75GAR120DN2 | |||
|---|---|---|---|
| Configuration | Single | Collector- Emitter Voltage Vceo Max | 1200 V |
| Collector-emitter Saturation Voltage | 2.5 V | Maximum Gate Emitter Voltage | +/- 20 V |
| Continuous Collector Current At 25 C | 105 A | Gate-emitter Leakage Current | 400 nA |
| Power Dissipation | 625 W | Maximum Operating Temperature | + 150 C |
| Package / Case | 34MM | Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw | Channel Type | N |
| Collector-emitter Voltage | 1.2kV | Gate To Emitter Voltage (max) | ±20V |
| Mounting | Screw | Operating Temperature (min) | -40C |
| Operating Temperature (max) | 150C | Operating Temperature Classification | Automotive |
| Module Configuration | Dual | Transistor Polarity | N Channel |
| Dc Collector Current | 105A | Collector Emitter Voltage Vces | 3V |
| Collector Emitter Voltage V(br)ceo | 1.2kV | Operating Temperature Range | -40°C To |
| Rohs Compliant | Yes | Ic (max) | 75.0 A |
| Vce(sat) (typ) | 2.5 V | Technology | IGBT2 Standard |
| Housing | 34 mm | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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BSM 75 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 75 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
V
I
Package
CE
C
1200V 105A
HALF BRIDGE GAL 1 C67076-A2011-A70
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
R
THJCDC
V
is
-
-
-
-
1
Ordering Code
Values
Unit
1200
V
1200
± 20
A
105
75
210
150
W
625
+ 150
°C
-40 ... + 125
0.2
K/W
0.5
0.36
2500
Vac
20
mm
11
F
sec
40 / 125 / 56
Nov-24-1997
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BSM75GAR120DN2 Summary of contents |
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