ZXMN10A08E6TA Diodes Inc, ZXMN10A08E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXMN10A08E6TA
• Description: MOSFET Small Signal 100V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN10A08E6TA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
0.01
Typical Transfer Characteristics
100
0.1
0.1
0.1
10
10
0.01
On-Resistance v Drain Current
1
1
1
3
V
T = 150°C
T = 25°C
0.1
DS
V
V
= 10V
DS
GS
Output Characteristics
3.5V
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
0.1
Drain Current (A)
V
GS
4
1
4V
T = -55°C
1
10V
4.5V
T = 25°C
10
T = 25°C
5
5V
4.5V
3.5V
4V
5V
V
10V
10
GS
www.diodes.com
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
10
1
-50
1
T = 150°C
0.1
0.4
V
V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
T = 150°C
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
V
I
D
A Product Line of
GS
= 250uA
0.6
= V
1
DS
50
V
I
D
GS
= 3.2A
= 10V
0.8
T = 25°C
100
10V
ZXMN10A08E6
10
R
V
4.5V
3V
5V
3.5V
DS(on)
4V
V
GS(th)
GS
© Diodes Incorporated
150
1.0
October 2009