BTS640S2G Infineon Technologies, BTS640S2G Datasheet - Page 10

• Manufacturer Part Number: BTS640S2G
• Description: Power Switch ICs - Power Distribution SMART SENSE HI-SIDE PWR SWITCH
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS640S2G

• On Resistance (max): 0.027 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 85000 mW
• Mounting Style: SMD/SMT
• Supply Current: 1.2 mA
• Package / Case: TO-263-8
• Mounting Type: Surface Mount
• Voltage - Supply: 5 V ~ 34 V
• Operating Temperature: -40°C ~ 150°C
• Number Of Outputs: 1
• Input Type: Non-Inverting
• Current - Output / Channel: 12.6A
• On-state Resistance: 27 mOhm
• Current - Peak Output: 50A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS640S2GXT

V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
Semiconductor Group
=
bb
V bb
E
V
disconnect with charged external
AS
bb
E
high
=
bb
E
2
I
AS
L
·
R
·
3
1
5
= E
L
L
3
1
5
·
ST
IN
IS
(
V
bb
ST
IN
IS
bb
+ E
PROFET
+ |V
GND
4
E
2
V
L
PROFET
bb
L
OUT(CL)
GND
- E
4
2
V bb
=
1 /
R
2
= V
OUT
OUT
·
L
|)
·
I
·
OUT
OUT
2
L
6
7
ON(CL)
ln
L
(1+
E AS
R
L
6
0 :
7
·
i
|V
L
(t) dt,
OUT(CL)
I
L
·
R
L
L
D
E
E
E Load
|
Page 10
R
)
L
BTS 640 S2
2003-Oct-01