BTS640S2G Infineon Technologies, BTS640S2G Datasheet - Page 5

• Manufacturer Part Number: BTS640S2G
• Description: Power Switch ICs - Power Distribution SMART SENSE HI-SIDE PWR SWITCH
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS640S2G

• On Resistance (max): 0.027 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 85000 mW
• Mounting Style: SMD/SMT
• Supply Current: 1.2 mA
• Package / Case: TO-263-8
• Mounting Type: Surface Mount
• Voltage - Supply: 5 V ~ 34 V
• Operating Temperature: -40°C ~ 150°C
• Number Of Outputs: 1
• Input Type: Non-Inverting
• Current - Output / Channel: 12.6A
• On-state Resistance: 27 mOhm
• Current - Peak Output: 50A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS640S2GXT

Parameter and Conditions
at T
Protection Functions
Initial peak short circuit current limit
Repetitive short circuit shutdown current limit
Output clamp
at V OUT = V bb - V ON(CL) ; I L = 40 mA,
Thermal overload trip temperature
Thermal hysteresis
Reverse battery
Reverse battery voltage drop
Diagnostic Characteristics
Current sense ratio
Current sense output voltage limitation
T j = -40 ...+150°C
Current sense leakage/offset current
8)
9
10)
11)
12)
Semiconductor Group
)
I L = -5 A
V IS = 0...5 V, V bb(on) = 6.5 11) ...27V,
k ILIS = I L / I IS
,
T j = -40 ...+150°C
T j = T jt (see timing diagrams, page 12)
not subject to production test, specified by design
j
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Requires 150
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
This range for the current sense ratio refers to all devices. The accuracy of the k
a factor of two by matching the value of k
In the case of current limitation the sense current I
High. See figure 2b, page 11.
Valid if
= 25 °C, V
V
V IN =5 V, V IS = 0, V OUT = 0
bb(u rst)
bb
(inductive load switch off)
= 12 V unless otherwise specified
resistor in GND connection. The reverse load current through the intrinsic drain-source
(pin 4 to 2)
was exceeded before.
10)
, static on-condition,
8)
T
j
= 25...+150°C, I
V IN =5 V, V IS = 0, I L = 0: I
T
9
j
)
= 25...+150°C, I
V IN =0, V IS = 0, I L = 0: I
(V out > V bb )
T
T
j
= -40°C, I
j
= -40°C, I
T
j
(pin 4 to 6&7)
=+25..+150°C:
I IS = 0, I L = 5 A:
ILIS
T
(short circuit):
for every single device.
j
T j =150 °C: -V
T
T
=+150°C:
L
T
Page 5
j
L
j
j
= 0.5 A:
= 0.5 A:
=-40°C:
=-40°C:
L
=25°C:
L
= 5 A: k
= 5 A:
IS
is zero and the diagnostic feedback potential
I
I
V
T
-V
V
I
Symbol
L(SCp)
L(SCr)
IS(LL)
IS(LH)
IS(SH)
ILIS
jt
T
ON(CL)
IS(lim)
bb
ON(rev)
jt
12 )
4550
3300
4550
4000
150
min
5.4
48
40
31
41
43
--
--
--
--
0
0
0
ILIS
can be raised at least by
Values
5000
5000
5000
5000
600
6.1
typ
56
50
37
24
47
10
--
--
--
--
--
--
BTS 640 S2
2003-Oct-01
6000
8000
5550
6500
max
6.9
65
58
45
52
32
15
10
--
--
--
--
--
V
1
ST
Unit
is
mV
°C
A
A
V
K
V
V
A