STTH4R02UY STMicroelectronics, STTH4R02UY Datasheet - Page 3

• Manufacturer Part Number: STTH4R02UY
• Description: DIODE ULT FAST 200V 4A SMB
• Manufacturer: STMicroelectronics

Specifications of STTH4R02UY

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.05V @ 4A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-11105-2

STTH4R02-Y
Figure 1.
Figure 3.
Figure 5.
50
45
40
35
30
25
20
15
10
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
0
90
80
70
60
50
40
30
20
10
1.E-01
0.0
0
0.0
S
Cu
SMC
0.1
=1cm²
0.5
Peak current versus duty cycle
Forward voltage drop versus
forward current (maximum values)
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMC)
P = 5 W
P = 5 W
0.2
1.E+00
1.0
0.3
P = 2 W
P = 2 W
0.4
T
j
=150°C
1.5
1.E+01
t
0.5
p
(s)
P = 1 W
P = 1 W
2.0
0.6
T
j
=25°C
0.7
1.E+02
2.5
I
I
M
M
δ
d
=tp/T
=tp/T
0.8
3.0
T
T
V
0.9
FM
Doc ID 17391 Rev 1
(V)
δ
tp
tp
1.E+03
1.0
3.5
Figure 2.
Figure 4.
Figure 6.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
100
75
50
25
1.E-01
10
0
0.0
1
S
Cu
SMB
=1cm²
0.5
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMB)
Junction capacitance versus
reverse applied voltage
(typical values)
1.E+00
1.0
10
T
j
=150°C
1.5
1.E+01
T
j
=25°C
2.0
100
1.E+02
2.5
Characteristics
V
osc
F=1MHz
T
=30mV
j
3.0
=25°C
V
t
p
FM
(s)
V
R
(V)
RMS
(V)
1.E+03
1000
3.5
3/9