BUK9Y27-40B,115 NXP Semiconductors, BUK9Y27-40B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y27-40B,115
• Description: MOSFET N-CH 40V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y27-40B,115

• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5528-2

NXP Semiconductors
BUK9Y27-40B
Product data sheet
Fig 6.
Fig 8.
(A)
g
I
(S)
D
100
fs
25
24
23
22
21
20
80
60
40
20
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
2
5
15
4
10
10
6
V
GS
(V) = 2
15
7
All information provided in this document is subject to legal disclaimers.
8
003aac871
003aac878
2.5
I
V
5
4.5
4
3.5
3
D
DS
(A)
(V)
10
20
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
100
D
80
60
40
20
20
15
10
0
5
0
function of gate-source voltage; typical values.
of drain current; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
N-channel TrenchMOS logic level FET
20
3
3.5
T
1
j
= 175 °C
40
BUK9Y27-40B
4
4.5
60
2
V
GS
5
T
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
(V) = 15
80
003aac873
V
003aac872
7
10
I
GS
D
(A)
(V)
100
3
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