BUK6207-55C,118 NXP Semiconductors, BUK6207-55C,118 Datasheet

MOSFET N-CH TRENCH DPAK

BUK6207-55C,118

Manufacturer Part Number
BUK6207-55C,118
Description
MOSFET N-CH TRENCH DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK6207-55C118.pdf (14 pages)

Specifications of BUK6207-55C,118

Input Capacitance (ciss) @ Vds
5160pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
82nC @ 10V
Power - Max
158W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.6 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
81 A, 90 A
Power Dissipation
128 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK6207-55C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 17 September 2010
AEC Q101 compliant
Compatible with logic and standard
level gate drives
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 25 A;
Figure 11
= 25 °C;
Figure 2
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
6.6
Max Unit
55
90
158
7.8
V
A
W
mΩ

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BUK6207-55C,118 Summary of contents

Page 1

... BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure Figure 383 - 158 -55 175 -55 175 [ ...

Page 4

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6207-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Typ Max - - 0.95 003aae317 δ ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...

Page 7

... A; dI /dt = -100 A/µ 003aae891 I ( (A) D Fig 6. 003aae893 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET Min Typ - 0. 100 300 μ 25° Output characteristics: drain current as a function of drain-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae895 4 4 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET 4 3 max typ 2 min 120 junction temperature 2 ...

Page 9

... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae897 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET 25° charge; typical values ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6207-55C v.2 20100917 • Modifications: Status changed from Objective to Product. BUK6207-55C v.1 20100909 BUK6207-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 September 2010 Document identifier: BUK6207-55C ...

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