BUK7Y18-75B,115 NXP Semiconductors, BUK7Y18-75B,115 Datasheet - Page 5

• Manufacturer Part Number: BUK7Y18-75B,115
• Description: MOSFET N-CH 75V 49A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-75B,115

• Input Capacitance (ciss) @ Vds: 2173pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5516-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y18-75B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
I
D
10
10
10
10
10
10
(A)
10
10
-1
-1
-2
-3
3
2
1
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
1
-6
Thermal characteristics
0.1
0.05
δ = 0.5
0.2
0.02
single shot
Limit R
Parameter
thermal resistance
from junction to
mounting base
DSon
= V
10
DS
-5
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
DC
10
10
-4
Figure 5
Rev. 03 — 7 April 2010
10
-3
N-channel TrenchMOS standard level FET
t
100 μs
1 ms
10 ms
100 ms
10
10
p
= 10 μs
-2
2
BUK7Y18-75B
Min
-
10
P
-1
V
DS
t
Typ
-
p
(V)
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aad516
003aac479
δ =
Max
1.42
t
T
p
t
10
1
3
Unit
K/W
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