BUK652R1-30C,127 NXP Semiconductors, BUK652R1-30C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK652R1-30C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK652R1-30C,127

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK652R1-30C
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
(A)
I
DSon
D
10
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
8
6
4
2
0
of gate-source voltage; typical values.
gate-source voltage
Drain-source on-state resistance as a function
Sub-threshold drain current as a function of
0
0
1
5
min
2
typ
max
10
3
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003aad806
V
003aae299
V
GS
GS
(V)
(V)
Rev. 02 — 16 December 2010
15
4
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
(S)
g
GS(th)
(V)
200
150
100
fs
50
N-channel TrenchMOS intermediate level FET
0
4
3
2
1
0
-60
drain current; typical values
junction temperature
Forward transconductance as a function of
0
25
0
BUK652R1-30C
max @1mA
min @2.5mA
typ @1mA
50
60
120
75
© NXP B.V. 2010. All rights reserved.
003aae295
003aae542
T
I
j
D
(°C)
(A)
100
180
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