STM32F101TBU6 STMicroelectronics, STM32F101TBU6 Datasheet - Page 52

• Manufacturer Part Number: STM32F101TBU6
• Description: IC ARM CORTEX MCU 128KB 36VFQFPN
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F101TBU6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 36MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 26
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-VFQFN Exposed Pad
• Core: ARM Cortex M3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical characteristics
5.3.11
52/87
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC61967-2 standard which specifies the test board and the pin loading.
Table 30.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 31.
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
●
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 32.
Symbol Parameter
V
V
Symbol
Symbol
S
ESD(HBM)
ESD(CDM)
EMI
LU
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Peak level
Static latch-up class
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
EMI characteristics
ESD absolute maximum ratings
Electrical sensitivities
Parameter
V
LQFP100 package
compliant with
IEC 61967-2
Ratings
DD
= 3.3 V, T
Conditions
Doc ID 13586 Rev 14
A
T
= 25 °C,
A
= +85 °C conforming to JESD78A
T
conforming to JESD22-A114
T
conforming to JESD22-C101
A
A
= +25 °C
= +25 °C
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1GHz
SAE EMI Level
frequency band
Monitored
Conditions
Conditions
STM32F101x8, STM32F101xB
Max vs. [f
Class
2
II
8/36 MHz
3.5
13
7
8
HSE
Maximum
value
/f
HCLK
2000
500
II level A
Class
(1)
]
dBµV
Unit
Unit
-
V