NX3V1T66GW,125 NXP Semiconductors, NX3V1T66GW,125 Datasheet

IC ANALOG SWITCH SPST UMT5

NX3V1T66GW,125

Manufacturer Part Number
NX3V1T66GW,125
Description
IC ANALOG SWITCH SPST UMT5
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3V1T66GW,125

Number Of Switches
1
Switch Configuration
SPST
On Resistance (max)
0.8 Ohms
On Time (max)
57 ns
Off Time (max)
90 ns
Off Isolation (typ)
- 90 dB
Supply Voltage (max)
4.3 V
Supply Voltage (min)
1.4 V
Supply Current
690 nA, 800 nA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-5
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
+/- 500 nA
Operating Frequency
25 MHz
Power Dissipation
250 mW
Switch Current (typ)
+/- 500 mA, +/- 750 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5568-2
1. General description
2. Features and benefits
The NX3V1T66 is a low-ohmic single-pole single-throw analog switch. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times. A low input voltage threshold allows pin E to be driven by lower level logic
signals without a significant increase in supply current I
NX3V1T66 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for
logic level translation.
The NX3V1T66 allows signals with amplitude up to V
from Z to Y. Its ultra-low ON resistance (0.3 ) and flatness (0.1 ) ensures minimal
attenuation and distortion of transmitted signals.
NX3V1T66
Low-ohmic single-pole single-throw analog switch
Rev. 6 — 21 December 2010
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
High noise immunity
ESD protection:
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
Enable input accepts voltages above supply voltage
1.8 V control logic at V
High current handling capability (500 mA continuous current under 3.3 V supply)
Specified from 40 C to +85 C and from 40 C to +125 C
0.8  (typical) at V
0.5  (typical) at V
0.3  (typical) at V
0.25  (typical) at V
0.25  (typical) at V
HBM JESD22-A114F Class 3A exceeds 7500 V
MM JESD22-A115-A exceeds 200 V
CDM AEC-Q100-011 revision B exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 6000 V for switch ports
CC
CC
CC
CC
CC
CC
= 1.4 V
= 1.65 V
= 2.3 V
= 3.6 V
= 2.7 V
= 4.3 V
CC
CC
to be transmitted from Y to Z or
. This makes it possible for the
Product data sheet

Related parts for NX3V1T66GW,125

NX3V1T66GW,125 Summary of contents

Page 1

NX3V1T66 Low-ohmic single-pole single-throw analog switch Rev. 6 — 21 December 2010 1. General description The NX3V1T66 is a low-ohmic single-pole single-throw analog switch. It has two input/output terminals (Y and Z) and an active HIGH enable input pin (E). ...

Page 2

... NXP Semiconductors 3. Applications  Cell phone  PDA  Portable media player 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name 40 C to +125 C NX3V1T66GW 40 C to +125 C NX3V1T66GM 5. Marking [1] Table 2. Marking codes Type number NX3V1T66GW NX3V1T66GM [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code ...

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... NXP Semiconductors 7. Pinning information 7.1 Pinning NX3V1T66 GND 3 001aai591 Fig 3. Pin configuration SOT353-1 (TSSOP5) 7.2 Pin description Table 3. Pin description Symbol Pin SOT353 GND n. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch ...

Page 4

... NXP Semiconductors 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage I V switch voltage SW I input clamping current IK I switch clamping current SK I switch current ...

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... NXP Semiconductors 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions V HIGH-level input voltage LOW-level input voltage input leakage enable input current 4.3 V ...

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... NXP Semiconductors 11.1 Test circuits GND V I  Fig 5. Test circuit for measuring OFF-state leakage current 11.2 ON resistance Table 8. Resistance recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Symbol Parameter Conditions R ON resistance V = GND to V ON(peak) ...

Page 7

... NXP Semiconductors 11.3 ON resistance test circuit and graphs GND Fig 7. Test circuit for measuring ON resistance NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch R ON (Ω 001aah375 (1) V (2) V (3) V (4) V (5) V (6) V Fig 8. All information provided in this document is subject to legal disclaimers. ...

Page 8

... NXP Semiconductors 0 (Ω) 0.6 0.4 (1) (2) (3) 0.2 ( 125 C. (1) T amb = 85 C. (2) T amb = 25 C. (3) T amb = 40 C. (4) T amb Fig 9. ON resistance as a function of input voltage 1 0 (Ω) 0.4 (1) (2) (3) 0.2 ( 125 C. (1) T amb = 85 C. (2) T amb = 25 C. ...

Page 9

... NXP Semiconductors 0 (Ω) 0.4 (1) (2) (3) 0.2 ( 125 C. (1) T amb = 85 C. (2) T amb = 25 C. (3) T amb = 40 C. (4) T amb Fig 13. ON resistance as a function of input voltage 3 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit ...

Page 10

... NXP Semiconductors 12.1 Waveform and test circuits Y output OFF to HIGH HIGH to OFF Measurement points are given in Logic level the typical output voltage that occurs with the output load. OH Fig 15. Enable and disable times Table 10. Measurement points Supply voltage 4.3 V Test data is given in ...

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... NXP Semiconductors 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V  specified 2.5 ns amb Symbol Parameter THD total harmonic distortion 3 dB frequency f (3dB) response  isolation (OFF-state) iso V crosstalk voltage ct Q charge injection ...

Page 12

... NXP Semiconductors Adjust f voltage to obtain 0 dBm level at output. Increase f i Fig 18. Test circuit for measuring the frequency response when channel is in ON-state Adjust f voltage to obtain 0 dBm level at input. i Fig 19. Test circuit for measuring isolation (OFF-state) NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch V 0 ...

Page 13

... NXP Semiconductors a. Test circuit b. Input and output pulse definitions Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch Y/Z Z 0.5V 0.5V CC logic off on input ( All information provided in this document is subject to legal disclaimers. ...

Page 14

... NXP Semiconductors a. Test circuit b. Input and output pulse definitions = V  C Definition: Q inj O L V = output voltage variation generator resistance. gen V = generator voltage. gen Fig 21. Test circuit for measuring charge injection NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch V CC ...

Page 15

... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 22 ...

Page 16

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 17

... NXP Semiconductors 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant 15. Revision history Table 14. Revision history Document ID Release date NX3V1T66 v.6 20101221 • ...

Page 18

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 19

... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 17. Contact information For more information, please visit: For sales office addresses, please send an email to: NX3V1T66 Product data sheet Low-ohmic single-pole single-throw analog switch 16 ...

Page 20

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values Recommended operating conditions Static characteristics 11.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 ...

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