74AUP2G38GD,125 NXP Semiconductors, 74AUP2G38GD,125 Datasheet

IC GATE NAND DUAL INPUT XSON8U

74AUP2G38GD,125

Manufacturer Part Number
74AUP2G38GD,125
Description
IC GATE NAND DUAL INPUT XSON8U
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AUP2G38GD,125

Product
NAND
Number Of Gates
2
Propagation Delay Time
4.9 ns, 6.5 ns, 8.2 ns, 12.6 ns
Supply Voltage (max)
4.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
XSON-8U
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5411-2
1. General description
2. Features and benefits
The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output
of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial Power-down applications using I
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
CC
74AUP2G38
Low-power dual 2-input NAND gate; open drain
Rev. 5 — 23 September 2010
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C
OFF
range from 0.8 V to 3.6 V.
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial Power-down mode operation
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 μA (maximum)
CC
Product data sheet
OFF
. The I
OFF

Related parts for 74AUP2G38GD,125

74AUP2G38GD,125 Summary of contents

Page 1

Low-power dual 2-input NAND gate; open drain Rev. 5 — 23 September 2010 1. General description The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output of the device is an open drain and can be ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP2G38DC −40 °C to +125 °C 74AUP2G38GT −40 °C to +125 °C 74AUP2G38GF −40 °C to +125 °C 74AUP2G38GD −40 °C to +125 °C 74AUP2G38GM −40 °C to +125 °C 74AUP2G38GN − ...

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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP2G38 GND 4 001aaf547 Fig 4. Pin configuration SOT765-1 74AUP2G38 GND 4 Transparent top view Fig 6. Pin configuration SOT996-2 6.2 Pin description Table 3. Pin description Symbol Pin SOT765-1, SOT833-1, SOT1089, SOT996-2, SOT1116 and SOT1203 1A 1B GND 4 1Y 74AUP2G38 Product data sheet Low-power dual 2-input NAND gate ...

Page 4

... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level high-impedance OFF state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage ...

Page 5

... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF Δ ...

Page 6

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = −40 °C to +85 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF Δ ...

Page 7

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = −40 °C to +125 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF Δ ...

Page 8

... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA nY; see propagation delay nA nY; see propagation delay nA nY; see propagation delay nA nY; see pd 74AUP2G38 Product data sheet Figure ...

Page 9

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and PZL PLZ [ used to determine the dynamic power dissipation (P PD × ...

Page 10

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 9. Test circuit for measuring switching times Table 10. ...

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... NXP Semiconductors 13. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

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... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 13

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 14

... NXP Semiconductors XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 0.5 mm terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.35 2.1 mm 0.5 0.00 0.15 1.9 OUTLINE VERSION IEC SOT996 Fig 13. Package outline SOT996-2 (XSON8U) ...

Page 15

... NXP Semiconductors XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm terminal 1 index area metal area not for soldering 2 1 terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.25 1.65 mm 0.5 0.00 ...

Page 16

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.25 mm nom 0.15 1.20 min 0.12 1.15 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 17

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 18

... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 12. Revision history Document ID Release date 74AUP2G38 v.5 20100923 • Modifications: Added type number 74AUP2G38GF (SOT1089/XSON8 package). ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 20

... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 17. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP2G38 Product data sheet Low-power dual 2-input NAND gate ...

Page 21

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Package outline ...

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