MMA20312BT1 Freescale Semiconductor, MMA20312BT1 Datasheet

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MMA20312BT1

Manufacturer Part Number
MMA20312BT1
Description
IC AMP HBT INGAP/GAAS 12-QFN
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MMA20312BT1

Current - Supply
70mA
Frequency
1.8GHz ~ 2.2GHz
Gain
27.2dB
Noise Figure
3.3dB
P1db
28.2dBm
Package / Case
12-VQFN Exposed Pad
Rf Type
LTE, PCS, TD-SCDMA, UMTS
Test Frequency
2.14GHz
Voltage - Supply
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMA20312BT1
Manufacturer:
FREESCALE
Quantity:
20 000
GaAs Solutions
Leadership in wireless communications
Expanded—Freescale’s GaAs
Solutions Portfolio
Leveraging our extensive GaAs capabilities
and a near half century of RF power device
experience, Freescale has developed both
a broad general purpose amplifier (GPA)
portfolio and an extensive selection of MMIC
devices. This portfolio offers amplifier devices
with P1dB from 15 to 33 dBm and LNAs with
noise figures below 0.5 dB.
Freescale's GaAs MMIC portfolio offers
products utilizing enhancement mode pHEMT
(E-pHEMT), HFET and InGaP HBT device
technologies. The E-pHEMT and HFET
devices offer higher OIP3 relative to HBT
devices biased at the same current.
This enables system designers to achieve
excellent linearity with lower power
consumption. The E-pHEMT devices offer
superior noise figure in conjunction with
excellent linearity at reduced biased currents,
relative to standard low-voltage InGaP HBT
technology. All products offer single positive
supply operation.
freescale.com/RFMMIC
With the expansion of the GaAs MMIC
portfolio, Freescale is well positioned to
offer designers a complete lineup for low- to
medium-power applications and components
suitable for the receive side of the radio
communications system.
• Low thermal resistance
• Devices operate directly from 5V supply
• Third-generation Darlington InGaP
• Latest generation of E-pHEMT process
• Broad base of available GaAs
• Historical strength in RF design and
Freescale Advantages
voltages and regulators—no external
resistors are required
HBT devices with integrated thermal
compensation schemes greatly reduce
performance variation over temperature
results in devices with extremely low
R
performance characteristics
technologies, including InGaP HBT,
E-pHEMT, EPI MESFET and HFET
GaAs MMIC technology
DS(on)
channel resistivity for superior RF
• World-class global sales and applications
• Strong manufacturing capabilities and
• Freescale’s infrastructure products
support
robust quality systems ensures a secure
product supply
group allows for a consolidated supply
chain, creating simplified procurement
logistics and additional cost saving for
the customer

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MMA20312BT1 Summary of contents

Page 1

GaAs Solutions Leadership in wireless communications Expanded—Freescale’s GaAs Solutions Portfolio Leveraging our extensive GaAs capabilities and a near half century of RF power device experience, Freescale has developed both a broad general purpose amplifier (GPA) portfolio and an extensive selection ...

Page 2

MMIC Applications The current GaAs MMIC portfolio includes a selection of two-stage linear power amplifiers and low noise amplifiers (LNA) that offer RF performance numbers optimized for the stringent base station requirements of the latest 3G and 4G networks as ...

Page 3

GPA Applications GPAs are ideal for applications where small signal gain is necessary. Freescale’s portfolio of GPAs combine the right level of gain, noise and power consumption specifications to meet the industry’s most demanding applications. Freescale GPAs provide excellent solutions ...

Page 4

... TD-SCDMA* • MMG3014N driving a MW7IC2240N for TD-SCDMA development Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. © 2011 Freescale Semiconductor, Inc. BR1609 Rev. 0 ...

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