MMBZ15VAL NXP Semiconductors, MMBZ15VAL Datasheet

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MMBZ15VAL

Manufacturer Part Number
MMBZ15VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,12V,SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of MMBZ15VAL

Reverse Stand-off Voltage Vrwm
12V
Breakdown Voltage Range
14.25V To 15.75V
Clamping Voltage Vc Max
21V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
1.9A
Diode Case Style
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Unidirectional ESD protection of
two lines
Bidirectional ESD protection of one line
Low diode capacitance: C
Rated peak pulse power: P
Ultra low leakage current: I
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Product overview
Package
NXP
SOT23
d
RM
PPM
≤ 280 pF
= 5 nA
= 40 W
JEDEC
TO-236AB
ESD protection up to 30 kV (contact
discharge)
IEC 61000-4-2; level 4 (ESD)
IEC 61643-321
AEC-Q101 qualified
Automotive electronic control units
Portable electronics
Product data sheet
Configuration
dual common anode

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MMBZ15VAL Summary of contents

Page 1

... Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection two signal lines. Table 1. Type number MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 1.2 Features Unidirectional ESD protection of two lines Bidirectional ESD protection of one line Low diode capacitance: C ...

Page 2

... MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL diode capacitance MHz; V MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Pinning Description cathode (diode 1) cathode (diode 2) common anode Rev. 02 — 10 December 2009 MMBZxAL series Min Typ - - - - ...

Page 3

... MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 4. Marking Table 5. Type number MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China MMBZXAL_SER_2 Product data sheet Low capacitance unidirectional double ESD protection diodes Ordering information ...

Page 4

... MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL total power dissipation T amb MMBZxAL series MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Rev. 02 — 10 December 2009 MMBZxAL series Min = 10/1000 μs [1][ 10/1000 μs [1][ ...

Page 5

... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg In accordance with IEC 61643-321 (10/1000 μs current waveform). [1] [2] Measured from pin pin 3. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...

Page 6

... NXP Semiconductors 150 I PP (%) ; 10 μs 100 % I 100 1.0 2.0 10/1000 μs pulse waveform according to Fig 1. IEC 61643-321 MMBZXAL_SER_2 Product data sheet Low capacitance unidirectional double ESD protection diodes 006aab319 ; 1000 μs 3.0 4.0 t (ms) p Fig 2. Rev. 02 — 10 December 2009 MMBZxAL series ...

Page 7

... MMBZxAL series MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL thermal resistance from junction to solder point MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Rev. 02 — 10 December 2009 MMBZxAL series Conditions Min Typ in free air [ [ [ ...

Page 8

... V RWM MMBZ15VAL V RWM MMBZ18VAL V RWM MMBZ20VAL V RWM MMBZ27VAL V RWM MMBZ33VAL V RWM breakdown voltage MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Rev. 02 — 10 December 2009 MMBZxAL series Min Typ - - - - - - - - - - - - - - - - - - - ...

Page 9

... MMBZ10VAL I PPM MMBZ12VAL I PPM MMBZ15VAL I PPM MMBZ18VAL I PPM MMBZ20VAL I PPM MMBZ27VAL I PPM MMBZ33VAL I PPM temperature coefficient MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Rev. 02 — 10 December 2009 MMBZxAL series Min Typ = 210 - 175 - 150 - 155 - 130 - 110 - ...

Page 10

... MHz; T amb (1) MMBZ10VAL: unidirectional (2) MMBZ10VAL: bidirectional (3) MMBZ15VAL: unidirectional (4) MMBZ15VAL: bidirectional (5) MMBZ27VAL: unidirectional (6) MMBZ27VAL: bidirectional Diode capacitance as a function of reverse voltage; typical values 006aab321 150 200 T (°C) j 006aab840 (4) (5) ( (V) R © NXP B.V. 2009. All rights reserved. ...

Page 11

... NXP Semiconductors (1) MMBZ5V6AL RWM (2) MMBZ6V8AL 4.5 V RWM (3) MMBZ9V1AL RWM (4) MMBZ27VAL RWM Fig 7. Reverse leakage current as a function of ambient temperature; typical values −V −V − RWM − + P-N Fig 8. V-I characteristics for a unidirectional ESD protection diode MMBZXAL_SER_2 Product data sheet Low capacitance unidirectional double ESD protection diodes ...

Page 12

... The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide a surge capability per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL, MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability per line, for a 10/1000 μs waveform. ...

Page 13

... Table 11. The indicated -xxx are the last three digits of the 12NC ordering code. Type number MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] For further information and the availability of packing methods, see MMBZXAL_SER_2 Product data sheet Low capacitance unidirectional double ESD protection diodes 3 ...

Page 14

... NXP Semiconductors 12. Soldering 3 1.7 Fig 12. Reflow soldering footprint SOT23 (TO-236AB) 2.6 4.6 Fig 13. Wave soldering footprint SOT23 (TO-236AB) MMBZXAL_SER_2 Product data sheet Low capacitance unidirectional double ESD protection diodes 3.3 2.9 1.9 0.7 (3×) 0.5 (3×) 0.6 (3×) 1 2.2 1.2 (2×) 1.4 (2× ...

Page 15

... Revision history Table 12. Revision history Document ID Release date MMBZXAL_SER_2 20091210 • Modifications: Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL added • Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG, MMBZ27VAL/DG, MMBZ33VAL/DG removed • Figure 5 • Figure • Figure • Section 14 “Legal MMBZXVAL_SER_1 20080901 ...

Page 16

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 17

... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 7 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Application information Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 9.1 Quality information . . . . . . . . . . . . . . . . . . . . . 12 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 11 Packing information ...

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