1N4448 NXP Semiconductors, 1N4448 Datasheet

DIODE, HIGH SPEED, DO-35

1N4448

Manufacturer Part Number
1N4448
Description
DIODE, HIGH SPEED, DO-35
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1N4448

Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
500mA
Operating
RoHS Compliant

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Product data sheet
Supersedes data of 2002 Jan 23
DATA SHEET
1N4148; 1N4448
High-speed diodes
M3D176
DISCRETE SEMICONDUCTORS
2004 Aug 10

Related parts for 1N4448

1N4448 Summary of contents

Page 1

... DATA SHEET 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 DISCRETE SEMICONDUCTORS M3D176 2004 Aug 10 ...

Page 2

... Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching. DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. ORDERING INFORMATION ...

Page 3

... Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F 1N4148 1N4448 I reverse current R I reverse current; 1N4448 R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point ...

Page 4

... T j Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Aug 10 mbg451 handbook, halfpage 200 T (°C) amb (1) T (2) T (3) T Fig 1N4148; 1N4448 600 I F (mA) 400 (1) (2) 200 (V) = 175 °C; typical values °C; typical values °C; maximum values. j Forward current as a function of forward voltage ...

Page 5

... V; typical values typical values. R Fig.5 Reverse current as a function of junction temperature. 2004 Aug 10 mgd290 handbook, halfpage (1) (2) 200 T (° MHz; T Fig.6 5 1N4148; 1N4448 1 (pF) 1.0 0.8 0.6 0 °C. j Diode capacitance as a function of reverse voltage; typical values. Product data sheet MGD004 (V) ...

Page 6

... Fig.7 Reverse recovery voltage test circuit and waveforms. I Ω Ω 450 Ω D.U.T. Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Aug 10% SAMPLING OSCILLOSCOPE Ω MGA881 I 90% OSCILLOSCOPE Ω 10% MGA882 1N4148; 1N4448 90% input signal output signal input signal Product data sheet (1) t output signal ...

Page 7

... UNIT max. max. max. mm 0.56 1.85 4.25 Note 1. The marking band indicates the cathode. OUTLINE VERSION IEC SOD27 A24 2004 Aug 10 ( min. 25.4 REFERENCES JEDEC JEITA DO-35 SC-40 7 Product data sheet 1N4148; 1N4448 SOD27 scale EUROPEAN ISSUE DATE PROJECTION 97-06-09 05-12-22 ...

Page 8

... Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 8 Product data sheet 1N4148; 1N4448 DEFINITION ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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