BAS16LD NXP Semiconductors, BAS16LD Datasheet - Page 5

• Manufacturer Part Number: BAS16LD
• Description: DIODE,HIGH SPEED,100V,0.215A,SOD882D
• Manufacturer: NXP Semiconductors

Specifications of BAS16LD

• Diode Type: Switching
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BAS16LD
Product data sheet
Fig 2.
Fig 4.
(mA)
(μA)
I
I
10
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
F
10
10
10
10
10
−1
−1
−2
−3
−4
−5
1
1
3
2
2
0
Forward current as a function of forward
voltage; typical values
0
voltage; typical values
Reverse current as a function of reverse
amb
amb
amb
amb
amb
amb
amb
amb
= 150 °C
= 85 °C
= 25 °C
= −40 °C
= 150 °C
= 85 °C
= 25 °C
= −40 °C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
All information provided in this document is subject to legal disclaimers.
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
1.4
Rev. 1 — 12 October 2010
Fig 3.
Fig 5.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
−1
1
2
0
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
10
4
Single high-speed switching diode
amb
= 25 °C
10
8
2
BAS16LD
10
12
© NXP B.V. 2010. All rights reserved.
3
t
V
p
R
(μs)
mbg704
mbg446
(V)
10
16
4
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