BLA6H1011-600 NXP Semiconductors, BLA6H1011-600 Datasheet - Page 4

• Manufacturer Part Number: BLA6H1011-600
• Description: LDOMS,RF,600W,1030M-1090MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H1011-600

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 72A
• Operating Frequency Range: 960MHz To 1.215GHz / 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-539A
• No. Of Pi: RoHS Compliant
• Transistor Type: RF MOSFET

NXP Semiconductors
7. Application information
BLA6H1011-600_1
Product data sheet
Fig 2.
(dB)
G
(1) f = 1030 MHz
(2) f = 1090 MHz
p
20
16
12
8
4
0
0
T
δ = 2 %.
Power gain as a function of load power;
typical values
h
= 25 °C; V
7.1 Impedance information
7.2 Performance curves
DS
300
= 48 V; I
Table 8.
Typical values per section unless otherwise specified.
f
MHz
1030
1060
1090
Fig 1.
Dq
= 100 mA; t
Definition of transistor impedance
600
Typical impedance
P
(2)
All information provided in this document is subject to legal disclaimers.
L
(1)
001aal832
(W)
p
= 50 μs;
900
Rev. 01 — 22 April 2010
Z
Ω
1.702 − j1.816
1.815 − j1.760
1.912 − j1.751
S
Fig 3.
gate
Z
(%)
η
S
(1) f = 1030 MHz
(2) f = 1090 MHz
D
60
40
20
0
0
T
δ = 2 %.
Drain efficiency as a function of load power;
typical values
h
= 25 °C; V
001aaf059
Z
drain
L
200
LDMOS avionics power transistor
DS
BLA6H1011-600
= 48 V; I
Z
Ω
0.977 + j0.049
1.033 + j0.221
1.086 + j0.379
400
L
Dq
= 100 mA; t
600
© NXP B.V. 2010. All rights reserved.
P
001aal833
L
p
(2)
(W)
= 50 μs;
(1)
800
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