FF600R12IE4 Infineon Technologies, FF600R12IE4 Datasheet - Page 3

• Manufacturer Part Number: FF600R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF600R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 3.35kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 600.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
9
%
%
9
B
+o
%
5M 7
+
j
H
"
N :
N
N :
N
N :
N
3
3
4
4
4
7
3
6
3
$
4
$
4
3
:#
6`$
$ :#
3
3
3
$
3 $
5stt
$
$
$
7
7
$
6
4
6
$
6
5stt
4
F h
F
$
4
9
$
$
3
$
$
7
2=> * PT
"0 *
"0 *
+n * /
+n * /
+n * /
+n * /
"0 * /
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+n * /
"0 * /
"W( *
+n * /
"0 * /
"W( *
kVJIK^ *
2' * PT
2' *
2' * PT
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5q * 5qr @ wNqrxztQ &2q
5q * 5qr @ wNqrxsttQ &2q
V *
FF600R12IE4
%
%
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"F V *
P "
P "
P "
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"
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F "W( *
F "W( *
F
F
F
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&
n&
n&
n&
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*
*
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"
"
F 2=> *
F 2=> * P T
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3
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&[ Q2=>* P T S
&[ Q2=>* P T S
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&Q
PT
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F P ESSy
F P ESSy
F P ESSy
2=> * PT
2=> *
2=> * P T
2=> * PT
2=> *
2=> * P T
2=> * PT
2=> *
2=> * P T
2=> * PT
2=> *
2=> * P T
PT
PT
PT
PT
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Nqrxrt
Nqrxzt
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u5&5
5KYi'
+n01
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5qr
9qr
+01
"n
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+o
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Vorläufige Daten
preliminary data
P
!!UP
!
! !!
P F
/ F
! F
PUF
PF
/
! P
F
FUP
FU
PF
P
F
F
P
P
UPF
F
P
F
@
@
E&7:
E&7:
7 o
7 o
[
[
[
7]
v
"
"
"
"
E
E
E
:
d
d
d